Epitaxy Process Engineer (MOCVD/MBE)

Location: Sagamihara, Japan

Company

hirify.global develops and manufactures optical and electrical technologies supported by advanced semiconductor process engineering.

What you will do

• Launch the SI process for EML epitaxy to support front-end capacity ramp-up.
• Execute design of experiments and apply results to device qualification runs.
• Achieve process qualification by meeting specifications on schedule.
• Develop automation, improve yield and UPD, and optimize processes using the Veeco Lumina reactor.
• Develop new or modified InP-based epitaxy processes, including growth conditions and equipment specifications.
• Plan and lead projects involving new concepts, automation technologies, and process innovations.

Requirements

• BSc, MSc, or PhD in electronics, electrical engineering, physics, or a related technical field.
• At least 2 years of relevant experience with a bachelor's degree, at least 1 year with a master's degree, or no relevant experience required with a PhD.
• Experience with III-V alloy materials such as InP, GaAs, and GaN epitaxy for optical or electrical device development.
• Strong experience with MOCVD and MBE processes and equipment.
• Experience with characterization technologies for epitaxial layers.
• Fluent Japanese and business-level English are required for online meetings, email communication, and documentation.

Nice to have

• Programming skills for epitaxy process improvement, in-situ control, data acquisition, and database handling.

Culture & Benefits

• Full-time employment.
• Equal opportunity employment and a commitment to diversity.
• Reasonable accommodation is provided for candidates with disabilities during hiring and employment.