Staff Device Engineer (GaN)

TL;DR

Staff Device Engineer (GaN): Designing and qualifying high-voltage GaN power devices for high-performance and automotive applications with an accent on device physics, simulation, and fabrication. Focus on taking new power devices from initial design through to volume production while ensuring optimal electrical and thermal reliability.

Location: Must be based in Branchburg, New Jersey, United States

Company

hirify.global is a leading innovator in high-voltage power conversion technologies.

What you will do

• Design and qualify high-voltage GaN power devices for high-performance and automotive products.
• Perform device and process simulations alongside device layout creation.
• Manage the full lifecycle of power devices, including creation, fabrication, and characterization.
• Evaluate electrical and thermal performance and reliability of developed devices.
• Issue technical reports and collaborate with cross-functional departments to support customer requirements.

Requirements

• B.Sc. in Electrical Engineering with 8+ years of experience, M.Sc. with 6+ years, or Ph.D. with 3+ years.
• Proven track record of independently designing and taking high-voltage GaN power devices to volume production.
• Sound understanding of semiconductor device physics, specifically Wide Bandgap (WBG) materials.
• Proficiency in TCAD simulation and Cadence layout tools.
• Hands-on experience with high-voltage testing and data acquisition systems.
• Strong communication and collaboration skills.

Nice to have

• Prior experience in Si power device development.