Staff Device Engineer (GaN)

Location: San Jose, California, United States; onsite

Company

hirify.global develops high-performance and high-reliability power semiconductor technologies, including solutions for automotive applications.

What you will do

• Design and qualify high-voltage GaN power devices for high-performance and high-reliability products, including automotive applications.
• Perform semiconductor device and process simulations and create device layouts.
• Lead power device creation, fabrication, full characterization, and technical reporting.
• Evaluate the electrical, thermal, and reliability performance of GaN power devices.
• Collaborate with other departments to apply company technologies and support key customer requirements.

Requirements

• Bachelor’s degree in Electrical Engineering with 8 years of professional experience, master’s degree with 6 years, or Ph.D. with 3 years.
• Proven experience independently designing high-voltage GaN power devices and taking them into volume production.
• Strong understanding of semiconductor device physics, especially wide-bandgap semiconductors.
• Proficiency with TCAD simulation and Cadence layout tools.
• Hands-on experience with high-voltage testing and data acquisition systems.
• Strong communication and collaboration skills.

Nice to have

• Prior experience developing silicon power devices.