Silicon Carbide (SiC) MOSFET Characterization Engineer

Location: Taipei, Taiwan; onsite position

Company

hirify.global develops and manufactures semiconductor and electronic components for global and local markets.

What you will do

• Develop and execute SiC MOSFET characterization plans from engineering samples through qualification and production release.
• Perform DC, AC, thermal, ruggedness, avalanche, SOA, short-circuit, Qrr, trr, and reverse-recovery testing.
• Conduct dynamic switching characterization using double-pulse and application-relevant tests, including Eon/Eoff, switching times, dv/dt, di/dt, and ringing.
• Evaluate device performance across temperature, bus voltage, drain current, gate-drive voltage, external gate resistance, and switching conditions.
• Investigate abnormal electrical behavior and correlate results with device, wafer process, assembly, package, and test variables.
• Support bench-to-ATE correlation, datasheet limits, product specifications, guard bands, production test limits, and technical reporting.

Requirements

• BS or MS in Electrical Engineering, Electronic Engineering, Semiconductor Engineering, Physics, or a related discipline.
• Typically 5+ years of experience in power semiconductor characterization, product engineering, device engineering, or applications engineering.
• Direct SiC MOSFET experience and knowledge of SiC device physics, switching behavior, gate oxide behavior, capacitances, body-diode recovery, avalanche, SOA, and temperature dependence.
• Hands-on experience with high-voltage power-device analyzers, curve tracers, double-pulse systems, oscilloscopes, high-voltage probes, current probes, and LCR or impedance analyzers.
• Knowledge of high-voltage measurement techniques, creepage and clearance, Kelvin connections, grounding, parasitic inductance, fixture design, and measurement correlation.
• Experience developing and debugging test boards and circuitry, and analyzing characterization data with Python, JMP, Spotfire, MATLAB, or equivalent tools.

Nice to have

• Experience with 650 V to 1700 V or higher power devices and automotive-grade SiC MOSFET development.
• AEC-Q101 qualification and new product introduction through high-volume manufacturing.
• Wafer-level and final-test correlation, production ATE screening, and manufacturing data analysis.
• SiC reliability testing including HTRB, HTGB, TDDB, threshold-voltage stability, and high-temperature operation.

Culture & Benefits

• Comprehensive benefit programs and resources supporting professional and personal goals.
• Open and collaborative work culture.
• Stable business with global and local career opportunities.