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5 дней назад

Sr Principal Electrical Engineer (GaN)

Формат работы
onsite
Тип работы
fulltime
Грейд
senior
Английский
b2
Страна
US
Вакансия из списка Hirify.GlobalВакансия из Hirify Global, списка международных tech-компаний
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TL;DR
Sr Principal Electrical Engineer (GaN/BCD): Leading the development of high-current BCD and low-voltage GaN test vehicles from architecture and circuit design through silicon bring-up, with an accent on power device selection, parasitic-aware IC layout, and module-level co-design. Focus on designing power conversion stages, planning characterization under switching and thermal stress, and correlating measured silicon results with simulations and process targets.

Location: San Jose, California; on-site position with no remote work available

Company

hirify.global is an embedded semiconductor solutions provider developing technology for automotive, industrial, infrastructure, and IoT applications.

What you will do

  • Define and design test vehicles for high-current BCD and low-voltage GaN process technologies, including device structures, scaled power stages, and demonstration circuits.
  • Translate process capabilities and product roadmap requirements into test vehicle architectures and specifications.
  • Design and simulate synchronous buck and boost converters, multiphase stages, half-bridge and DrMOS-style architectures, and gate drivers.
  • Select and characterize LDMOS, trench MOSFET, low-voltage GaN HEMT, Schottky, and synchronous rectifier devices.
  • Perform parasitic-aware IC layout and extend designs to modules, packages, magnetics, PCBs, and evaluation boards.
  • Lead characterization, silicon bring-up, debugging, simulation correlation, and documentation for technology qualification and product development.

Requirements

  • Bachelor’s or Master’s degree in Electrical Engineering, Microelectronics, or a related field.
  • 10+ years of hands-on experience in power semiconductor devices, analog or power ICs, or power electronics.
  • Strong knowledge of buck, boost, multiphase, half-bridge, and DrMOS power conversion topologies.
  • Experience with BCD and low-voltage GaN device physics, including RDS(ON), switching loss, gate charge, breakdown behavior, and thermal characteristics.
  • Experience designing process-development test structures or test chips, IC layout, module or package co-design, and evaluation boards.
  • Proficiency with SPICE or equivalent circuit simulation, familiarity with TCAD concepts, and strong laboratory skills using oscilloscopes, curve tracers, power analyzers, and thermal imaging.

Culture & Benefits

  • Collaborative work across process integration, reliability, product, applications, and test engineering.
  • Work within a global organization of more than 21,000 engineers and problem solvers across over 30 countries.
  • Competitive employee benefits alongside salary.
  • Culture based on transparency, agility, global collaboration, innovation, and entrepreneurship.

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