5 дней назад
Principal Engineer, Technology Development (RF GaN)
85 000 - 146 000$
Мэтч & Сопровод
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Описание вакансии
Текст:
TL;DR
Principal Engineer, Technology Development (RF GaN): Developing integrated semiconductor process flows and RF GaN devices for a 200mm manufacturing fab with an accent on device performance, reliability, yield, and manufacturability. Focus on designing and analyzing experiments, characterizing GaN HEMTs, and transferring qualified technologies into manufacturing.
Location: USA - Vermont - Essex Junction; on-site work includes time in a manufacturing clean room
Salary: $85,000.00–$146,000.00 per year
Company
manufactures essential semiconductors for high-growth markets, including AI applications, through operations across the U.S., Europe, and Asia.
What you will do
- Develop innovative RF GaN semiconductor technologies for a 200mm manufacturing fab.
- Create integrated process flows and device structures meeting performance, reliability, yield, and cost objectives.
- Deliver performance and reliability demonstrations across technology qualification milestones, from concept through manufacturing installation.
- Collaborate with testing, failure analysis, process, reliability, manufacturing, modeling, and TCAD engineering teams.
- Plan, execute, and analyze experiments, including constructional analysis, inline measurements, and test-lab assessments.
- Evaluate manufacturability capability and defectivity while supporting environmental, health, safety, and security requirements.
Requirements
- Technical university degree in electrical engineering, solid-state physics, microelectronics, chemical engineering, materials science, or a related field.
- BS with 2–4 years of experience, MS with 1–3 years, or PhD with 0–1 year of experience.
- Knowledge of GaN HEMT and semiconductor device physics, including DC, S-parameter, load-pull, and pulsed I-V characterization.
- Experience with semiconductor processing, particularly wide-bandgap or III-N materials.
- Overall GPA of at least 3.0 and proven good academic standing.
- Fluent written and verbal English and the ability to work on-site in a manufacturing clean room are required.
Nice to have
- Master’s or PhD in electrical engineering, materials science, solid-state physics, engineering, or physical science.
- Research experience with GaN HEMT RF or power devices and wide-bandgap device physics.
- Experience with GaN-on-silicon processing and device characterization.
- Project management, leadership, planning, and organizational skills.
- Experience working in a global matrixed environment with minimal supervision.
Culture & Benefits
- Full-time employment with accelerated training for new college graduates.
- Mentorship, networking, and leadership opportunities.
- Cross-functional collaboration and talent mobility opportunities.
- Work in a global semiconductor manufacturing organization focused on security, longevity, and sustainability.
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