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5 дней назад

Principal Engineer, Technology Development (RF GaN)

85 000 - 146 000$
Формат работы
onsite
Тип работы
fulltime
Грейд
senior
Английский
c1
Страна
US
Вакансия из списка Hirify.GlobalВакансия из Hirify Global, списка международных tech-компаний
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Описание вакансии

Текст:
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TL;DR
Principal Engineer, Technology Development (RF GaN): Developing integrated semiconductor process flows and RF GaN devices for a 200mm manufacturing fab with an accent on device performance, reliability, yield, and manufacturability. Focus on designing and analyzing experiments, characterizing GaN HEMTs, and transferring qualified technologies into manufacturing.

Location: USA - Vermont - Essex Junction; on-site work includes time in a manufacturing clean room

Salary: $85,000.00–$146,000.00 per year

Company

hirify.global manufactures essential semiconductors for high-growth markets, including AI applications, through operations across the U.S., Europe, and Asia.

What you will do

  • Develop innovative RF GaN semiconductor technologies for a 200mm manufacturing fab.
  • Create integrated process flows and device structures meeting performance, reliability, yield, and cost objectives.
  • Deliver performance and reliability demonstrations across technology qualification milestones, from concept through manufacturing installation.
  • Collaborate with testing, failure analysis, process, reliability, manufacturing, modeling, and TCAD engineering teams.
  • Plan, execute, and analyze experiments, including constructional analysis, inline measurements, and test-lab assessments.
  • Evaluate manufacturability capability and defectivity while supporting environmental, health, safety, and security requirements.

Requirements

  • Technical university degree in electrical engineering, solid-state physics, microelectronics, chemical engineering, materials science, or a related field.
  • BS with 2–4 years of experience, MS with 1–3 years, or PhD with 0–1 year of experience.
  • Knowledge of GaN HEMT and semiconductor device physics, including DC, S-parameter, load-pull, and pulsed I-V characterization.
  • Experience with semiconductor processing, particularly wide-bandgap or III-N materials.
  • Overall GPA of at least 3.0 and proven good academic standing.
  • Fluent written and verbal English and the ability to work on-site in a manufacturing clean room are required.

Nice to have

  • Master’s or PhD in electrical engineering, materials science, solid-state physics, engineering, or physical science.
  • Research experience with GaN HEMT RF or power devices and wide-bandgap device physics.
  • Experience with GaN-on-silicon processing and device characterization.
  • Project management, leadership, planning, and organizational skills.
  • Experience working in a global matrixed environment with minimal supervision.

Culture & Benefits

  • Full-time employment with accelerated training for new college graduates.
  • Mentorship, networking, and leadership opportunities.
  • Cross-functional collaboration and talent mobility opportunities.
  • Work in a global semiconductor manufacturing organization focused on security, longevity, and sustainability.

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