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6 часов назад

Principal Technology Development Engineer (GaN)

125 000 - 165 000$
Формат работы
onsite
Тип работы
fulltime
Грейд
senior
Английский
b2
Страна
US
Вакансия из списка Hirify.GlobalВакансия из Hirify Global, списка международных tech-компаний
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Описание вакансии

Текст:
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TL;DR
Principal Technology Development Engineer (GaN semiconductor manufacturing): Developing, transferring, optimizing, and documenting process flows for reliable, manufacturable GaN-on-silicon HEMT devices with an accent on process integration, device characterization, and electrical performance. Focus on TCAD process simulations, designed experiments, cross-functional process optimization, and achieving first-pass success in semiconductor test lots.

Location: Bloomington, Minnesota, USA; onsite

Salary: $125,000–$165,000 per year

Company

hirify.global is a U.S.-based semiconductor manufacturing partner and pure-play foundry expanding advanced power and sensor technologies, including GaN and BCD technology.

What you will do

  • Develop, transfer, optimize, and document process flows and macro modules for reliable, manufacturable GaN-on-silicon HEMT devices.
  • Set up process and device simulations, design experiments, and analyze results to establish process sequences and parameters.
  • Characterize semiconductor devices and analyze electrical, in-process measurement, visual inspection, and test-lot data.
  • Work with Process Engineering to develop and optimize process modules and support initial test-chip and transfer-lot processing.
  • Collaborate with Device Engineers on layout rules, test structures, and mask-set development.
  • Provide development updates to management and external customers while supporting quality, safety, yield, and cost-containment initiatives.

Requirements

  • Master’s or PhD in Electrical Engineering, Physics, Materials Science, or a related field.
  • 5+ years of experience in a relevant technology development or semiconductor process function.
  • Strong process integration knowledge for GaN-on-silicon HEMT power devices and semiconductor device physics, particularly III-V nitrides.
  • Working knowledge of semiconductor process modules including photolithography, etching, thin films, CMP, and MOCVD.
  • Experience with process-flow design, electrical test data correlation, failure analysis, power packaging, backend processes, and process or technology FMEAs.
  • Experience with DoE and data-analysis tools such as JMP or Spotfire, TCAD process simulations, and design-layout interpretation.

Nice to have

  • Knowledge of GaN market trends and experience evaluating new technology opportunities.
  • Process integration experience with CMOS, BCDMOS, discrete IGBTs, or MOSFETs.

Culture & Benefits

  • Health, dental, vision, disability, and life insurance.
  • 401(k) plan with company match.
  • Paid time off, annual bonus, and tuition reimbursement.
  • Collaborative semiconductor manufacturing environment focused on customer success, quality, safety, and continuous improvement.

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