1 час назад
IC Design Engineer (CMOS Analog/Mixed-Signal)
Мэтч & Сопровод
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Описание вакансии
Текст:
TL;DR
IC Design Engineer (CMOS Analog/Mixed-Signal): Developing next-generation ferroelectric memory products and analog/mixed-signal blocks for hafnium oxide-based NVM technology with an accent on circuit design, memory architecture integration, and silicon robustness. Focus on designing sense amplifiers, decoders, bandgaps, high-voltage regulators, and ADCs, while running PVT verification and supporting post-silicon debug.
Location: Dresden, Germany; Grenoble, France; or Milan, Italy
Company
develops next-generation products based on hafnium oxide technology.
What you will do
- Design and develop emerging NVM memory devices based on hafnium oxide technology.
- Define specifications and integrate analog and mixed-signal blocks into memory architectures.
- Design analog circuits for NVM memories, including sense amplifiers, decoders, bandgaps, high-voltage regulators, and ADCs.
- Run PVT simulations, parasitic extraction, and circuit verification to ensure performance and reliability.
- Collaborate with layout engineers to optimize robustness, matching, and area.
- Support post-silicon verification, debugging, and optimization of memory IP and test chips.
Requirements
- 5–10 years of relevant experience and a degree in Electrical Engineering or a related field.
- Strong experience in CMOS IC design, analog/mixed-signal design, and NVM device design.
- Hands-on experience with Cadence design tools and Verilog for modeling or verification.
- Familiarity with Cadence DFII, Virtuoso, SPICE, and Verilog-A design and simulation flows.
- Knowledge of CMOS device physics and circuit behavior across PVT conditions.
- Strong problem-solving skills and effective collaboration in cross-functional teams.
Culture & Benefits
- Full-time permanent employment.
- Collaboration with international teams in Milan or Dresden.
- Work on innovative concepts and next-generation memory products.
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