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13 часов назад

RF Technology Development Device Engineer (2027 New College Graduate) (SiGe)

85 000 - 146 000$
Тип работы
fulltime
Грейд
junior
Английский
b2
Страна
US
Вакансия из списка Hirify.GlobalВакансия из Hirify Global, списка международных tech-компаний
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Описание вакансии

Текст:
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TL;DR
RF Technology Development Device Engineer (2027 New College Graduate) (SiGe): Developing and characterizing SiGe HBT semiconductor devices through TCAD simulation, electrical analysis, and process integration with an accent on RF measurements, device performance optimization, and technology design rules. Focus on high-power measurements, S-parameter and load-pull analysis, solving technical process problems, and driving continuous device and process improvement.

Location: USA - Vermont - Essex Junction

Expected salary: $85,000–$146,000 per year

Company

hirify.global is a semiconductor foundry manufacturing essential, power-efficient, and high-performance chips across operations in the United States, Europe, and Asia.

What you will do

  • Develop SiGe HBT devices through TCAD simulation, design, electrical characterization, and analysis.
  • Conduct theoretical studies and simulations to optimize device performance and benchmark results against state-of-the-art technologies.
  • Collaborate with the process integration team on device fabrication and establish technology design rules, test structures, and test methodologies.
  • Perform DC and RF characterization, including high-power measurements, S-parameter analysis, and load-pull measurements.
  • Lead technical process problem-solving, data analysis, and continuous device and process improvement.
  • Interact with internal and external customers and respond to technical queries while supporting safety, environmental, health, and security requirements.

Requirements

  • Graduating with a Master’s or PhD in Electrical Engineering, Materials Science, another relevant engineering discipline, or physical science.
  • Research background in CMOS, III-V, or memory device physics, semiconductor processing, and characterization.
  • Strong data analysis, interpersonal, written, and verbal communication skills.
  • Overall GPA of at least 3.0 and demonstrated good academic standing.
  • English fluency required for written and verbal communication.

Nice to have

  • Research experience in silicon or SiGe BiCMOS FEOL or BEOL processing and semiconductor process development.
  • Research experience in RF device design and characterization, including high-frequency design, measurement, and analysis.
  • Experience with Cadence or another layout and simulation tool.
  • Related internship or co-op experience, leadership experience, project management skills, and strong planning and organizational skills.

Culture & Benefits

  • Full-time employment path for recent graduates in a fast-paced work environment.
  • Accelerated training, mentorship, networking, and leadership opportunities.
  • Opportunities for cross-functional collaboration and talent mobility.
  • Employment is subject to applicable pre-employment conditions and laws.

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