13 часов назад
RF Technology Development Device Engineer (2027 New College Graduate) (SiGe)
85 000 - 146 000$
Мэтч & Сопровод
Для мэтча с этой вакансией нужен Plus
Описание вакансии
Текст:
TL;DR
RF Technology Development Device Engineer (2027 New College Graduate) (SiGe): Developing and characterizing SiGe HBT semiconductor devices through TCAD simulation, electrical analysis, and process integration with an accent on RF measurements, device performance optimization, and technology design rules. Focus on high-power measurements, S-parameter and load-pull analysis, solving technical process problems, and driving continuous device and process improvement.
Location: USA - Vermont - Essex Junction
Expected salary: $85,000–$146,000 per year
Company
is a semiconductor foundry manufacturing essential, power-efficient, and high-performance chips across operations in the United States, Europe, and Asia.
What you will do
- Develop SiGe HBT devices through TCAD simulation, design, electrical characterization, and analysis.
- Conduct theoretical studies and simulations to optimize device performance and benchmark results against state-of-the-art technologies.
- Collaborate with the process integration team on device fabrication and establish technology design rules, test structures, and test methodologies.
- Perform DC and RF characterization, including high-power measurements, S-parameter analysis, and load-pull measurements.
- Lead technical process problem-solving, data analysis, and continuous device and process improvement.
- Interact with internal and external customers and respond to technical queries while supporting safety, environmental, health, and security requirements.
Requirements
- Graduating with a Master’s or PhD in Electrical Engineering, Materials Science, another relevant engineering discipline, or physical science.
- Research background in CMOS, III-V, or memory device physics, semiconductor processing, and characterization.
- Strong data analysis, interpersonal, written, and verbal communication skills.
- Overall GPA of at least 3.0 and demonstrated good academic standing.
- English fluency required for written and verbal communication.
Nice to have
- Research experience in silicon or SiGe BiCMOS FEOL or BEOL processing and semiconductor process development.
- Research experience in RF device design and characterization, including high-frequency design, measurement, and analysis.
- Experience with Cadence or another layout and simulation tool.
- Related internship or co-op experience, leadership experience, project management skills, and strong planning and organizational skills.
Culture & Benefits
- Full-time employment path for recent graduates in a fast-paced work environment.
- Accelerated training, mentorship, networking, and leadership opportunities.
- Opportunities for cross-functional collaboration and talent mobility.
- Employment is subject to applicable pre-employment conditions and laws.
Будьте осторожны: если работодатель просит войти в их систему, используя iCloud/Google, прислать код/пароль, запустить код/ПО, не делайте этого - это мошенники. Обязательно жмите "Пожаловаться" или пишите в поддержку. Подробнее в гайде →
Похожие вакансии
11 часов назад
Foundry Device Engineer (CMOS)
161 550 - 317 600$
9 часов назад
Sr. Electronic Engineer (RF/DC)
88 425 - 147 375$
16 часов назад
Electronic Engineer (RF/DC)
81 675 - 136 125$
11 часов назад
Senior Principal RFIC Design Engineer (RFIC)
170 600 - 227 400$
11 часов назад
Staff RFIC Design Engineer (Analog Mixed-Signal)
119 900 - 159 800$
4 дня назад
Senior RF Systems Engineer (SDR)
145 353 - 218 030$