Technology Device Modelling (GaN Power Devices)

TL;DR

Technology Device Modelling (GaN Power Devices): Designing and qualifying high-voltage GaN power devices for high-performance and automotive products with an accent on device/process simulations and layout. Focus on semiconductor device physics, TCAD simulation, and full characterization from fabrication to volume production.

Location: San Jose, California

Company

hirify.global is a leader in the development of high-performance power semiconductor devices.

What you will do

• Design and qualify high-voltage GaN power devices integrated into high-performance and high-reliability products, including automotive applications.
• Perform detailed device/process simulations and device layout for GaN power devices.
• Manage the full cycle of power device creation, including fabrication and full characterization.
• Evaluate the electrical and thermal performance, as well as the reliability, of GaN power devices.
• Collaborate with other internal departments to optimize technology usage and meet key customer requirements.

Requirements

• Degree in Electrical Engineering: B.Sc with 8+ years, M.Sc with 6+ years, or Ph.D. with 3+ years of working experience.
• Proven track record of independently designing high-voltage GaN power devices and taking them into volume production.
• Deep understanding of semiconductor device physics, particularly Wide Bandgap (WBG) materials.
• Proficiency in TCAD simulation and CADENCE layout tools.
• Hands-on experience with high-voltage testing and data acquisition systems.
• Strong communication and collaboration skills.

Nice to have

• Prior experience in Si power device development.