Sr Principal Product Engineer (DDR IP)
Мэтч & Сопровод
Для мэтча с этой вакансией нужен Plus
Описание вакансии
TL;DR
Sr Principal Product Engineer (DDR IP): Serve as primary technical interface for strategic customer engagements deploying DDR PHY IP solutions in post-silicon environment with an accent on protocol, physical layer, signal integrity, and power integrity. Focus on debugging customer silicon issues, reproducing failures in lab with equipment like oscilloscopes and BERTs, and providing onsite support.
Location: Nanjing, China. Travel to customer sites (about 10% of time) for silicon bringup and debug.
Company
is a leader in electronic design, delivering software, hardware, and IP that turn design concepts into reality for chips, boards, and systems in consumer, hyperscale computing, 5G, automotive, aerospace, industrial, and health markets.
What you will do
- Demonstrate strong understanding of DDR, LPDDR, and GDDR protocol and physical layer implementations.
- Act as primary technical liaison for debugging customer silicon issues in systems and ATE.
- Use lab equipment like oscilloscopes, BERTs, protocol exercisers, and analyzers to reproduce and diagnose failures.
- Address signal integrity (SI) and power integrity (PI) requirements, assisting in hardware issue diagnosis.
- Provide onsite support at customer sites for silicon bringup and debug (10% travel).
- Own and manage customer support cases using SFDC, Sherlock, and JIRA; leverage AI tools for productivity and insights.
Requirements
- M.S. in Electrical/Computer Engineering (or similar) with 10+ years experience, or PhD with 5+ years relevant experience.
- Experience with Memory PHY, Memory Controller, and DRAM.
- Experience using advanced mixed-signal verification and system simulation tools.
- Strong debug, problem-solving, presentation, and communication skills.
- Strong background in post-silicon bringup and debug; experience with lab equipment.
- Familiarity with SI/PI analysis concepts for diagnosing hardware issues.
Nice to have
- Familiarity with advanced technology nodes (7nm and below).
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