Вакансия из Hirify Global, списка международных tech-компаний Для мэтча и отклика нужен Plus
Пожаловаться
Зарплата и рынок
развернуть
$174к-330к/год
$170к$190кмедиана$210к
По похожим ролям (50) ~ $190к/год
На СНГ рынке: $2.5к/мес ($1.9к - $3.1к)
87
Отличная вакансия
развернуть
Роль четко сфокусирована на моделировании передовых FinFET и GAAFET-технологий в Intel; главный компромисс - обязательная работа на месте в Хиллсборо.
Не совпадает компания
Четкая специализация
Передовые технологии
?Только офис
Мэтч & Сопровод
Для мэтча с этой вакансией нужен Plus
Подключить Plus
Описание вакансии
Текст:
Hirify AI/Оригинал
TL;DR
Semiconductor Device Modeling Engineer (BSIM-CMG/FinFET/GAAFET): Developing compact models for advanced semiconductor technologies to support Intel's technology co-optimization and customer design enablement with an accent on IV/CV fitting, model retargeting, and statistical variation modeling. Focus on building LLE models, automating extraction and documentation with Python, and modeling layout-dependent and self-heating effects.
Location: On-site in Hillsboro, Oregon, United States
Annual salary: $173,660–$330,340 USD
Company
hirify.global is presented as the hiring company; the role description identifies the Compact Device Modeling Group as part of Intel's Design Technology Platform organization, supporting semiconductor technology development and foundry customers.
What you will do
Develop and support compact models for Intel's advanced semiconductor technologies.
Co-optimize process technology and modeling to help design teams deliver products for data-centric applications.
Perform transistor model extraction, IV/CV fitting, model retargeting, and corner/statistical variation modeling.
Develop LLE models for FinFET and GAAFET technologies.
Automate modeling workflows and documentation with Python.
Collaborate across multiple teams and geographies on device modeling activities.
Requirements
Master's degree in Electrical Engineering or a related discipline with at least 5+ years of semiconductor industry experience, or a Ph.D. in Electrical Engineering or a related discipline with at least 3+ years of semiconductor industry experience.
At least 3 years of hands-on experience with BSIM-CMG and other compact models for transistor modeling at advanced nodes such as FinFET and GAA.
Proficiency with extraction tools such as ICCAP or MBP and commercial simulators such as HSPICE or Spectre.
Strong background in IV/CV fitting, model retargeting, and corner/statistical variation modeling.
Experience developing LLE models for FinFET or GAAFET technologies.
Python scripting skills for automation and documentation.
Nice to have
Ph.D. in Electrical Engineering or a related discipline with 8+ years of semiconductor industry experience.
Expertise in layout-dependent effects, Open Model Interface modeling, process flow, layout, and basic circuit design or simulation.
Experience modeling self-heating effects and their impact on device and circuit performance.
Experience developing device-targeting and benchmarking methodologies, including corners and statistical variation models.
Technical leadership experience and the ability to collaborate across multiple teams and geographies.
Experience applying machine learning algorithms to data analysis and compact model development.
Culture & Benefits
On-site work model is required.
Full-time experienced-hire position on Shift 1 in the United States.
Benefits include health coverage, retirement benefits, vacation, competitive pay, and stock bonuses.
Hiring follows responsible business and ethical hiring practices; candidates are not charged recruitment or employment-related fees.
Будьте осторожны
Если работодатель просит войти в их систему, используя iCloud/Google, прислать код/пароль, запустить код/ПО, не делайте этого. Это мошенники. Обязательно жмите «Пожаловаться» или пишите в поддержку. Подробнее в гайде →