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3 дня назад

RF Technology Development Integration Engineer - SMTS (Semiconductor)

118 000 - 210 000$
Формат работы
onsite
Тип работы
fulltime
Грейд
senior
Английский
b2
Страна
US
Релокация
US
Вакансия из списка Hirify.GlobalВакансия из Hirify Global, списка международных tech-компаний
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Описание вакансии

Текст:
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TL;DR
RF Technology Development Integration Engineer - SMTS (Semiconductor): Developing, optimizing, and qualifying FEOL and BEOL semiconductor devices and processes for RF technologies with an accent on BiCMOS/RFSOI integration, yield improvement, and technology performance. Focus on designing experiments, solving process problems, establishing design rules and characterization methods, and leading cross-functional technology development.

Location: Essex Junction, Vermont, United States; ability to relocate to Essex Junction required

Salary: $118,000–$210,000 per year

Company

hirify.global is a full-service semiconductor foundry providing semiconductor design, development, and fabrication services through a global manufacturing footprint.

What you will do

  • Develop, optimize, and qualify FEOL and BEOL semiconductor devices and processes against performance, cost, and yield requirements.
  • Drive integration optimization using design of experiments, statistical analysis, and yield-learning techniques.
  • Own technical process problem solving and establish integration checkpoints, performance metrics, design rules, test structures, and test methodologies.
  • Develop novel integration schemes and process improvements to strengthen technology competitiveness.
  • Partner with unit process, failure analysis, and characterization engineers to improve device performance and yield.
  • Interact with customers, respond to technical queries, and provide technical leadership and mentorship across cross-functional programs.

Requirements

  • Master’s degree or PhD in electrical engineering, materials science, or a relevant engineering or physical science discipline, or a bachelor’s degree with 8–10 years of relevant experience.
  • At least 5 years of experience in semiconductor processing or process development.
  • Experience with silicon or SiGe BiCMOS FEOL or BEOL processing.
  • Experience with Cadence or another layout and simulation tool, along with strong data analysis skills.
  • Fluent written and verbal English is required.
  • Must be able to relocate to Essex Junction, Vermont.

Nice to have

  • Seven or more years of experience in silicon, SiGe BiCMOS, or RFSOI FEOL or BEOL processing.
  • Experience leading device or process development projects.
  • Knowledge of semiconductor device physics, RF device behavior, and RF characterization techniques such as S-parameters.
  • Experience with process optimization, yield enhancement, reliability qualification, and root-cause analysis.
  • Strong leadership, communication, organizational, and cross-functional collaboration skills.

Culture & Benefits

  • Work in a global, matrixed semiconductor development environment.
  • Support environmental, health, safety, and security requirements.
  • Collaborate with multidisciplinary teams and external customers.
  • Employment is subject to applicable pre-employment conditions and laws.

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