3 дня назад
RF Technology Development Integration Engineer - SMTS (Semiconductor)
118 000 - 210 000$
Мэтч & Сопровод
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Описание вакансии
Текст:
TL;DR
RF Technology Development Integration Engineer - SMTS (Semiconductor): Developing, optimizing, and qualifying FEOL and BEOL semiconductor devices and processes for RF technologies with an accent on BiCMOS/RFSOI integration, yield improvement, and technology performance. Focus on designing experiments, solving process problems, establishing design rules and characterization methods, and leading cross-functional technology development.
Location: Essex Junction, Vermont, United States; ability to relocate to Essex Junction required
Salary: $118,000–$210,000 per year
Company
is a full-service semiconductor foundry providing semiconductor design, development, and fabrication services through a global manufacturing footprint.
What you will do
- Develop, optimize, and qualify FEOL and BEOL semiconductor devices and processes against performance, cost, and yield requirements.
- Drive integration optimization using design of experiments, statistical analysis, and yield-learning techniques.
- Own technical process problem solving and establish integration checkpoints, performance metrics, design rules, test structures, and test methodologies.
- Develop novel integration schemes and process improvements to strengthen technology competitiveness.
- Partner with unit process, failure analysis, and characterization engineers to improve device performance and yield.
- Interact with customers, respond to technical queries, and provide technical leadership and mentorship across cross-functional programs.
Requirements
- Master’s degree or PhD in electrical engineering, materials science, or a relevant engineering or physical science discipline, or a bachelor’s degree with 8–10 years of relevant experience.
- At least 5 years of experience in semiconductor processing or process development.
- Experience with silicon or SiGe BiCMOS FEOL or BEOL processing.
- Experience with Cadence or another layout and simulation tool, along with strong data analysis skills.
- Fluent written and verbal English is required.
- Must be able to relocate to Essex Junction, Vermont.
Nice to have
- Seven or more years of experience in silicon, SiGe BiCMOS, or RFSOI FEOL or BEOL processing.
- Experience leading device or process development projects.
- Knowledge of semiconductor device physics, RF device behavior, and RF characterization techniques such as S-parameters.
- Experience with process optimization, yield enhancement, reliability qualification, and root-cause analysis.
- Strong leadership, communication, organizational, and cross-functional collaboration skills.
Culture & Benefits
- Work in a global, matrixed semiconductor development environment.
- Support environmental, health, safety, and security requirements.
- Collaborate with multidisciplinary teams and external customers.
- Employment is subject to applicable pre-employment conditions and laws.
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