11 дней назад
R&D Engineer IC Design (RF)
Мэтч & Сопровод
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Описание вакансии
Текст:
TL;DR
R&D Engineer IC Design (RF) (RF power amplifiers): Developing RF power amplifiers for RF front-end modules across architecture, system design, transistor-level circuits, simulations, layout, and validation support with an accent on ET, APT, and Doherty PA design. Focus on correlating simulations with measured results, analyzing linearity, memory effects, AM-PM distortion, and thermal behavior, and performing circuit characterization and debugging.
Location: Seoul, South Korea
Company
is the hiring company for this RF IC design position.
What you will do
- Develop RF power amplifiers for RF front-end modules.
- Participate in architecture, system design, transistor-level circuit design, top-level simulations, layout, and validation support.
- Design ET, APT, and Doherty power amplifiers.
- Perform simulations and correlate results with measured data.
- Characterize circuits in the laboratory and support debugging and problem solving.
- Collaborate with RF front-end module, layout, and validation teams throughout development.
Requirements
- MS degree or PhD with hands-on experience in RF power amplifier or related RFIC circuit design.
- Knowledge of RF IC design, device physics, microwave engineering, and electromagnetics.
- Solid RF and analog layout knowledge and experience.
- Experience with ADS, Cadence Virtuoso, HFSS, and ETH.
- Understanding of ET/APT behavior, including linearity, memory effects, AM-PM distortion, and thermal effects.
- Strong laboratory, communication, debugging, and problem-solving skills.
Culture & Benefits
- Full-time employment.
- Collaborative work with RF front-end module, layout, and validation teams.
- Equal opportunity employment policy.
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