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Power Semiconductor Product Engineer (SiC MOSFET)

Формат работы
onsite
Тип работы
fulltime
Грейд
senior
Английский
b2
Страна
Taiwan
Вакансия из списка Hirify.GlobalВакансия из Hirify Global, списка международных tech-компаний
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Мэтч & Сопровод

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Описание вакансии

Текст:
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TL;DR
Power Semiconductor Product Engineer (SiC MOSFET): Characterizing, evaluating, qualifying, and releasing silicon carbide power MOSFET products in Taipei with an accent on high-voltage, thermal, ruggedness, and dynamic switching measurements. Focus on correlating device, wafer, package, and test variables, developing production screening methods, and defining datasheet and automated test limits.

Location: Taipei, Taiwan; onsite

Company

hirify.global develops and manufactures electronic components and semiconductor products for global and local markets.

What you will do

  • Develop and execute SiC MOSFET characterization plans from engineering samples through qualification and production release.
  • Perform DC, AC, thermal, ruggedness, avalanche, SOA, short-circuit, and reverse-recovery characterization.
  • Conduct dynamic switching tests using double-pulse and application-relevant methods, including Eon/Eoff, switching times, dv/dt, di/dt, and ringing measurements.
  • Evaluate device performance across temperature, bus voltage, drain current, gate-drive voltage, external gate resistance, and switching conditions.
  • Investigate abnormal electrical behavior and correlate results with device, wafer process, assembly, package, and test variables.
  • Develop production screening methods, support bench-to-ATE correlation, establish datasheet limits and guard bands, and communicate technical conclusions to cross-functional teams.

Requirements

  • Bachelor’s or master’s degree in electrical engineering, electronic engineering, semiconductor engineering, physics, or a related discipline.
  • Typically 5+ years of experience in power semiconductor characterization, product engineering, device engineering, or applications engineering.
  • Strong understanding of SiC MOSFET physics, switching behavior, gate oxide behavior, capacitances, body-diode recovery, avalanche, SOA, and temperature dependence.
  • Hands-on experience with high-voltage measurement equipment, power-device analyzers, curve tracers, double-pulse systems, oscilloscopes, high-voltage probes, current probes, and LCR or impedance analyzers.
  • Experience developing and debugging test boards and related circuitry, with knowledge of creepage and clearance, Kelvin connections, grounding, parasitic inductance, fixture design, and measurement correlation.
  • Experience analyzing characterization data with Python, JMP, Spotfire, MATLAB, or equivalent tools.

Nice to have

  • Direct SiC MOSFET experience, especially with 650 V to 1700 V or higher power devices.
  • Automotive-grade SiC MOSFET development and AEC-Q101 qualification experience.
  • New product introduction experience from engineering characterization through qualification and high-volume manufacturing.
  • Experience with wafer-level and final-test correlation, production ATE screening, manufacturing data analysis, and SiC reliability testing.

Culture & Benefits

  • Comprehensive benefit programs and resources supporting personal and professional goals.
  • Open and collaborative work culture.
  • Stable business with global and local career opportunities.

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