Process Support Engineer III (Semiconductor)

Location: Santa Clara, CA, United States. On-site customer installations, system diagnoses, equipment service and repair; travel required 20% of the time. Relocation eligible.

Salary: $124,000–$171,000 per year.

Company

hirify.global develops materials science and engineering solutions, equipment, and services used to manufacture semiconductor chips and advanced displays.

What you will do

• Provide customer support through on-site installations, system diagnoses, and service and repair of complex semiconductor equipment.
• Work with customers and R&D teams to develop leading-edge processes for advanced semiconductor chip manufacturing.
• Create hypothesis experiments and design of experiments, analyze data statistically, and prepare reports with high-level conclusions.
• Troubleshoot complex process and customer product issues, perform root cause analyses, and implement resolutions.
• Communicate with customers and internal stakeholders to build consensus, establish trust, and achieve project goals.
• Support junior colleagues, liaise between customers and the business unit, and lead small projects with manageable risks and resource requirements.

Requirements

• Bachelor’s degree in chemistry, physics, materials engineering, electrical engineering, optoelectronics, or a related field.
• 4–7 years of experience with PVD, CVD, or ALD in the semiconductor fab or equipment industry.
• Strong interpersonal and communication skills, including the ability to explain sensitive information and build consensus among project stakeholders.
• English communication proficiency.

Nice to have

• Master’s degree or PhD in a related field.

Culture & Benefits

• Supportive work culture focused on learning, professional development, and career growth.
• Health and wellbeing programs and comprehensive employee benefits.
• Potential eligibility for bonus and stock award programs.
• Work on advanced semiconductor technologies, including Chemical Vapor Deposition, Atomic Layer Deposition, Plasma Reactive Ion Etch, Physical Vapor Deposition, Anneal, and Implant.