Principal Device Engineer (GaN)

TL;DR

Principal Device Engineer (GaN): Driving the development of next-generation GaN power devices with an accent on device architecture, simulation, and optimization. Focus on translating advanced device physics into high-performance, manufacturable solutions and leading TCAD simulation and modeling.

Location: Manchester, United Kingdom (Onsite)

Company

A global semiconductor manufacturer specializing in power discretes and next-generation GaN technologies.

What you will do

• Lead device architecture definition and optimization for GaN technologies.
• Manage performance targets and balance trade-offs across performance, reliability, and manufacturability.
• Drive TCAD simulation, modeling, and design to support technology and product development.
• Collaborate with cross-functional teams across process, characterization, reliability, and product engineering.
• Support industrialization by delivering robust, scalable device concepts.

Requirements

• Degree (MSc/PhD) or equivalent in semiconductor physics, electrical engineering, or a related field.
• Proven experience in GaN or wide bandgap device development.
• Strong expertise in device physics, TCAD simulation, and semiconductor design.
• Track record of leading complex, multidisciplinary technical projects.
• Analytical, self-driven, and collaborative mindset for an international environment.

Culture & Benefits

• Inclusive and diverse work environment with a commitment to equal opportunity.
• Access to employee resource groups, including the Pride Network and Women's groups.
• Collaborative global team culture focused on solving complex technical challenges.
• Strong corporate dedication to increasing diversity in management positions.