Staff Device Engineer (GaN)

TL;DR

Staff Device Engineer (GaN): Designing and qualifying high-voltage GaN power devices for high-performance and automotive products with an accent on device simulations and layout. Focus on fabrication, full characterization, and evaluation of electrical/thermal performance and reliability.

Location: Onsite in California, USA

Salary: $133,472 – $200,456 per year

Company

A semiconductor company specializing in high-performance, high-reliability power devices.

What you will do

• Design and qualify high-voltage GaN power devices integrated into high-performance and automotive products.
• Perform device/process simulations and create layouts for GaN power devices.
• Manage power device creation, fabrication, full characterization, and technical reporting.
• Evaluate the electrical and thermal performance as well as the reliability of GaN power devices.
• Interact with cross-functional departments to optimize technology use and meet key customer requirements.

Requirements

• Degree in Electrical Engineering: B.Sc with 8+ years, M.Sc with 6+ years, or Ph.D. with 3+ years of experience.
• Proven track record of independently designing and taking high-voltage GaN power devices into volume production.
• Deep understanding of semiconductor device physics, specifically Wide Bandgap (WBG) materials.
• Proficiency in TCAD simulation and CADENCE layout tools.
• Hands-on experience with high-voltage testing and data acquisition systems.
• Strong communication and collaboration skills.

Nice to have

• Prior experience in Silicon (Si) power device development.

Culture & Benefits

• Comprehensive total rewards package including equity and ESPP.
• Medical benefits and 401K plan.
• Tuition reimbursement programs.
• Paid time off programs.