Engineer II Device (BCD MOS)

Location: Rousset, France; onsite role with collaboration across France and the United States. Travel: 0–25%.

Company

hirify.global is a global semiconductor company developing technologies and products used across the technology industry.

What you will do

• Contribute to technology transfer, technology enhancement, and device development projects focused on BCD MOS technologies.
• Collaborate with Design, Fab, and Product Engineering teams to improve yield, optimize circuits, and enhance device performance.
• Analyze electrical characterization data from DOE and corner lots to support technology optimization and validation.
• Support device characterization, bench measurements, technical analysis, and TCAD simulations.
• Define and draw test key structures, and run design/layout and process experiments for semiconductor device optimization.
• Troubleshoot device and process issues, investigate field failures and customer returns, implement corrections, and present technical results.

Requirements

• Strong knowledge of microelectronics, including wafer fabrication, device physics, and TCAD simulations using Sentaurus.
• Familiarity with the Unix environment and Cadence tools.
• Self-motivated, proactive, with strong communication and teamwork skills.
• Fluent verbal and written communication skills in English and French.
• New College Grade candidates with less than 3 years of experience must have a master’s degree or PhD with a major emphasis on semiconductor devices.

Culture & Benefits

• Hands-on work in technology enhancement, device characterization, and process optimization.
• Opportunity to work in an international semiconductor team across multiple locations and business units.
• Employee development and career-growth programs.
• Work environment emphasizing trust, empowerment, respect, diversity, communication, and teamwork.