NAND Array Reliability R&D Engineer (NAND)

Location: Rancho Cordova, California, United States

Salary: $105,440–$164,800 per year, with eligibility for RSU, RCU, and cash bonus programs.

Company

A multibillion-dollar memory technology company developing next-generation NAND products and data storage solutions with facilities across the United States, Asia, Europe, and the Americas.

What you will do

• Design and perform NAND memory cell and array reliability characterization experiments and analyze the resulting data.
• Develop empirical and physics-based predictive reliability models and tools for risk assessment.
• Create acceleration techniques, reliability test flows, methods, and analytical tools.
• Perform model- and data-driven trade-off analysis and develop array reliability strategy roadmaps with cross-functional stakeholders.
• Define component-level array reliability requirements and provide feedback for wafer-level reliability goals.
• Use array reliability analysis to develop system-level SSD algorithms and policies and support NAND technology and product qualifications.

Requirements

• Master’s degree or PhD in Electrical Engineering, Physics, Materials Science, Microelectronics, or a related field.
• Understanding of NAND cell and array operations, array reliability mechanisms, and characterization.
• Knowledge of semiconductor device physics, solid-state physics, reliability physics, and semiconductor process flows.
• Strong statistical analysis skills and programming ability in C, C++, and Python.
• Ability to work in cross-functional teams with strong problem-solving, communication, and presentation skills.

Culture & Benefits

• Collaborative, inclusive, diverse, and results-driven working environment.
• Medical, dental, vision, life, AD&D, and disability insurance.
• Healthcare and dependent care flexible spending accounts.
• Company match on eligible 401(k) plan contributions.
• Participation in restricted stock unit, restricted cash unit, and cash bonus programs.