Principal Engineer (GaN)

Location: Zhubei, Taiwan; onsite only

Company

hirify.global is an embedded semiconductor solution provider developing technology for automotive, industrial, infrastructure, and IoT applications.

What you will do

• Drive technical understanding of GaN device physics, charge-trapping mechanisms, and reliability behavior.
• Define and evaluate GaN device architectures to improve performance, robustness, and competitive differentiation.
• Lead advanced device characterization, data analysis, and root-cause investigations.
• Drive improvements in device performance, yield, and reliability.
• Collaborate with multidisciplinary teams to guide technology development and accelerate GaN product commercialization.

Requirements

• Ph.D. preferred, or M.S. in Electrical Engineering or a related field.
• 10+ years of semiconductor device R&D experience focused on GaN technology.
• Hands-on experience with pulsed I-V, gate-lag and drain-lag, transient drain current, MOS interface trap analysis, and related characterization techniques.
• Technical leadership experience and the ability to work across multidisciplinary teams.
• Fluent English and Chinese required.
• Willingness to travel for business.

Nice to have

• Experience with TCAD simulation tools such as Sentaurus or Silvaco.
• Knowledge of reliability failure models and degradation mechanisms.
• Familiarity with the AEC-Q101 standard.

Culture & Benefits

• Regular permanent employment.
• Collaboration within a global organization of more than 21,000 engineers and problem solvers across over 30 countries.
• Culture grounded in transparency, agility, global collaboration, innovation, and entrepreneurship.
• Competitive benefits package provided alongside salary.