Master Thesis Student (TCAD Simulation)

TL;DR

Master Thesis Student (TCAD Simulation): Optimizing the switching speed of bipolar junction transistor (BJT) technologies via simulation and data analysis with an accent on device-level simulations and semiconductor physics. Focus on designing and validating models to predict switching performance and improving high-speed Bipolar transistors for next-generation integrated circuits.

Location: Hamburg, Germany

Company

hirify.global is a global semiconductor manufacturer focused on essential components for a smart and sustainable world.

What you will do

• Conduct literature reviews on state-of-the-art transistor architectures and switching mechanisms.
• Perform device-level TCAD simulations to analyze switching behavior under various conditions.
• Investigate the impact of material properties, device geometry, and parasitic elements on switching speed.
• Develop and validate models to predict switching performance.
• Collaborate with the R&D team to design and test prototype devices.
• Document findings and present results in team meetings and final reports.

Requirements

• Currently enrolled in a master’s program in Electrical Engineering, Microelectronics, Physics, or a related field.
• Strong understanding of semiconductor device physics, especially diode and BJT.
• Experience with simulation tools.
• English: Good communication skills required.

Nice to have

• German language skills.

Culture & Benefits

• Hands-on experience in cutting-edge semiconductor research.
• Access to state-of-the-art simulation and measurement tools.
• Opportunity to contribute to publications or conference presentations.
• Collaborative and supportive research environment.
• Attractive remuneration and a bonus for a high-quality final thesis.