GaN Characterization Intern

TL;DR

GaN Characterization Intern (Semiconductors): Executing experiments including static/dynamic characterization of discrete or cascode GaN devices, TDDB-based lifetime studies, and data analysis and interpretation with an accent on reliability and WBG applications. Focus on preparing concise reports with key comparison charts and tables for customer communications.

Location: San Jose, California

Hourly pay: $40 to $45 (California intern)

Company

hirify.global builds innovative teams in power semiconductors.

What you will do

• Execute experiments on static/dynamic characterization of discrete or cascode GaN devices
• Conduct TDDB-based lifetime studies
• Perform data analysis and interpretation
• Prepare concise report including key comparison charts and tables for customer communications

Requirements

• MS/PhD student
• Field of study: Semiconductor device physics, GaN, Reliability, WBG applications

Nice to have

• Hands-on experience with static and dynamic characterization of semiconductor power devices