13 дней назад
Senior Staff / Staff Engineer – GaN Technologist, Technology Development (GaN)
140 000 - 210 000$
Вакансия из Hirify Global, списка международных tech-компанийДля мэтча и отклика нужен Plus
Мэтч & Сопровод
Для мэтча с этой вакансией нужен Plus
Описание вакансии
Текст:
TL;DR
Senior Staff / Staff Engineer – GaN Technologist, Technology Development (GaN): Developing next-generation high-voltage GaN HEMT technologies for commercial power semiconductor products with an accent on device performance, manufacturability, reliability, and scalable technology platforms. Focus on defining device architectures, developing TCAD models, qualifying fabrication processes, transferring technologies into high-volume manufacturing, and leading cross-functional technical innovation.
Location: San Jose, California, United States
Annual base pay: $140,000–$210,000
Company
develops power semiconductor technologies and products for power conversion applications.
What you will do
- Lead the development and optimization of high-voltage GaN HEMT technologies for commercial power semiconductor products.
- Define technology roadmaps and improve RDS(on), breakdown voltage, switching performance, robustness, and reliability.
- Analyze device physics, failure mechanisms, and reliability behavior to guide technology advancements.
- Collaborate with process integration, product development, reliability, packaging, and manufacturing teams to develop and qualify device architectures and fabrication processes.
- Support technology transfer from research and development into product development and high-volume manufacturing.
- Lead characterization, qualification, TCAD modeling, technical publications, patent generation, and mentoring of engineers.
Requirements
- Ph.D. or M.S. in Electrical Engineering, Physics, Materials Science, or a related discipline.
- At least 10 years of semiconductor device development experience, including significant GaN technology experience.
- Deep understanding of high-voltage GaN HEMT device physics and operation.
- Experience developing, characterizing, and qualifying GaN power semiconductor technologies.
- Strong background in semiconductor process technology, device characterization, reliability, failure analysis, and interpretation of electrical, physical, and reliability data.
- Demonstrated ability to lead technical projects and influence cross-functional teams, with excellent written and verbal communication skills.
Nice to have
- Experience with lateral high-voltage GaN technologies above 650V.
- Experience with TCAD simulation tools and advanced device modeling.
- Experience with HV BCD process development, design rule definitions, ESD protection, power conversion applications, external foundries, or technology development partners.
- Track record of patents, publications, and industry-recognized technical contributions.
Culture & Benefits
- Collaboration across worldwide process integration, product development, reliability, packaging, and manufacturing teams.
- Equity and employee stock purchase plan.
- Medical benefits, 401(k), tuition reimbursement, and time off programs.
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