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Principal Device Engineer (Power MOSFET)

Формат работы
hybrid
Тип работы
fulltime
Грейд
senior
Английский
b2
Страна
UK
Вакансия из списка Hirify.GlobalВакансия из Hirify Global, списка международных tech-компаний
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Текст:
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TL;DR
Principal Device Engineer (Power MOSFET/TCAD): Developing and optimising Power Trench MOSFET architectures using advanced TCAD simulation with an accent on device physics, electrostatic and thermal analysis, and reliability. Focus on designing cell structures and termination schemes, translating simulation results into process and layout requirements, and solving device-level issues through silicon learning and industrialisation.

Location: Manchester, United Kingdom; hybrid and flexible working available

Company

hirify.global develops semiconductor technologies, including Power Trench MOSFET products, through advanced device engineering and manufacturing.

What you will do

  • Develop and optimise Power Trench MOSFET architectures using advanced TCAD simulation.
  • Perform electrostatic, thermal and reliability-related simulations to guide device decisions.
  • Design cell structures, termination schemes and next-generation device concepts.
  • Support technology roadmaps through quantitative trade-off and feasibility analysis.
  • Translate simulation results into process, layout and structural requirements.
  • Collaborate with Process Integration, Product Development, Design, Manufacturing and Foundry partners on development, production troubleshooting and industrialisation.

Requirements

  • MSc or PhD in Electrical Engineering, Physics or a related field.
  • Several years of experience in device engineering and TCAD-based technology development.
  • Strong understanding of semiconductor device physics and deep expertise with TCAD tools such as Synopsys Sentaurus.
  • Experience with Power MOSFET concepts, ideally trench-based, including performance, reliability and manufacturability trade-offs.
  • Strong analytical, problem-solving and technical communication skills.
  • Willingness to travel occasionally as required.

Nice to have

  • PhD focused on power semiconductor devices.
  • Industrial or foundry experience in Power MOSFET technology.
  • Experience with process integration or layout-driven device optimisation.
  • Knowledge of high-field effects, ruggedness, UIS and reliability mechanisms.
  • Understanding of foundry developments and process transfers.

Culture & Benefits

  • Hybrid and flexible working with 33 days of annual leave.
  • Annual Incentive Plan of up to 20%, contributory pension scheme of up to 9% and recognition rewards.
  • Income protection, enhanced sick pay, life assurance and an on-site medical centre.
  • Funded academic support opportunities up to PhD level and management or technical development pathways.
  • Employee resource groups, inclusion initiatives and paid time off for charitable work.

Hiring process

  • Recruiter review.
  • Teams interview.
  • Final on-site or Teams interview and assessment.

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