FBAR Filter Designer (RF/Microwave)

TL;DR

FBAR Filter Designer (RF/Microwave): Leading the development of high-performance RF Front-End (RFFE) solutions with an accent on acoustic resonator synthesis and full module integration. Focus on optimizing physical die layout, conducting 3D EM simulations, and ensuring robust performance for high-volume manufacturing.

Location: Must be based in San Jose, California (Onsite)

Salary: $120,000 - $192,000

Company

Global technology leader that designs, develops, and supplies a broad range of semiconductor and infrastructure software solutions.

What you will do

• Design high-Q FBAR filters and multiplexers using optimized topologies.
• Own the physical die layout and package integration, optimizing for parasitics and thermal dissipation.
• Manage the interface between acoustic die, laminate, and PCB to ensure signal integrity.
• Lead 3D EM simulations to model package-level parasitics, interconnects, and coupling.
• Perform Monte Carlo and corner analyses to ensure robust performance for high-volume manufacturing (HVM).
• Collaborate with process, modeling, and test teams to correlate simulations with measured lab data.

Requirements

• PhD (EE/Physics) with 7+ years of experience OR Master’s with 10+ years in RF/Microwave design (Acoustic Filter or RFFE Module).
• Deep understanding of FBAR/BAW/SAW physics or extensive experience in RFFE module integration.
• Expert proficiency in ADS and 3D EM tools such as HFSS, CST, or Sonnet.
• Strong grasp of RFFE architectures, including carrier aggregation and coexistence specifications.
• Proven track record of successful tape-outs or high-volume product releases.

Culture & Benefits

• Competitive annual base salary and discretionary annual bonus.
• Eligibility for new hire equity grants and annual equity awards.
• Opportunity to work with a global leader in semiconductor technology.
• Commitment to equal opportunity employment and diversity.