Master Thesis Student (m/f/d) – TCAD Simulation of Switching Behavior of BJTs

TL;DR

Master Thesis Student (m/f/d) – TCAD Simulation of Switching Behavior of BJTs (Semiconductors): Optimizing switching speed of bipolar junction transistor technologies via simulation and data analysis with an accent on device-level TCAD simulations, modeling, and prototype testing. Focus on investigating material properties, device geometry, parasitic elements, and predicting switching performance under various conditions.

Location: Hamburg

Company

Leading semiconductor manufacturer focused on discrete components and integrated circuits.

What you will do

• Conduct literature reviews on transistor architectures and switching mechanisms.
• Perform TCAD device-level simulations to analyze switching behavior.
• Investigate impact of material properties, geometry, and parasitics on switching speed.
• Develop and validate models for switching performance prediction.
• Collaborate on designing and testing prototype devices.
• Document findings and present in team meetings and reports.

Requirements

• Currently enrolled in master’s program in Electrical Engineering, Microelectronics, Physics, or related field.
• Strong understanding of semiconductor device physics, especially diodes and BJTs.
• Experience with simulation tools.
• Good communication skills in English (German beneficial).
• Ability to work independently.

Culture & Benefits

• Hands-on experience in cutting-edge semiconductor research.
• Access to state-of-the-art simulation and measurement tools.
• Opportunity to contribute to publications or conference presentations.
• Collaborative and supportive research environment.
• Full-time fixed-term contract with attractive remuneration and bonus for excellent thesis.
• Inclusive culture with diversity focus and employee resource groups.