4 дня назад
Master’s Thesis: Integrated Active Gate Biasing for GaN HEMT Amplifiers
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Описание вакансии
Текст:
TL;DR
Master’s Thesis: Integrated Active Gate Biasing for GaN HEMT Amplifiers (MMIC/microwave engineering): Designing a monolithic microwave integrated circuit amplifier with an integrated gate driver, including literature review, concept evaluation, and technical documentation. Focus on selecting a compact gate-biasing approach, designing the MMIC amplifier, and presenting the thesis results.
Location: Göteborg, Sweden
Company
is a defense and security company developing advanced systems in aeronautics, weapons, command and control, sensors, and underwater systems.
What you will do
- Review literature on integrated gate drivers in MMIC technology.
- Evaluate alternative design concepts and select the most promising approach.
- Design a monolithic microwave integrated circuit amplifier with an integrated gate driver.
- Document the work in a thesis report and present the results.
- Collaborate with microwave and antenna engineers in Surveillance’s Microwave and Antenna Design unit.
Requirements
- Be completing a master’s-level engineering degree.
- Have an interest in microwave engineering and control engineering.
- Show particular enthusiasm for MMIC design.
- The project is suitable for one or two students.
- Pass security vetting under applicable security-protection regulations; additional citizenship obligations may apply for positions requiring security clearance.
Culture & Benefits
- Work with experienced engineers and specialists.
- Gain practical experience applying theoretical knowledge to real-world technology challenges.
- Receive support and guidance while developing practical solutions.
- Contribute to radar and electronic warfare products within Surveillance.
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