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1 день назад

RF Device Modeling Engineer

Формат работы
onsite
Тип работы
fulltime
Грейд
senior
Английский
b2
Страна
SK
Вакансия из списка Hirify.GlobalВакансия из Hirify Global, списка международных tech-компаний
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Описание вакансии

Текст:
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TL;DR

RF Device Modeling Engineer: Characterizing RF devices and developing simulation methodologies for RF frontend modules with an accent on power amplifiers, SOI RF switches, and low noise amplifiers. Focus on test fixture design, measurement data analysis, device physics analysis, and improving RF circuit simulation accuracy.

Location: Onsite in Seoul, South Korea (HiBrand).

Company

hirify.global is a global technology leader that designs, develops, and supplies a broad range of semiconductor and infrastructure software solutions.

What you will do

  • Characterize RF devices and develop simulation methodologies for accurate circuit performance.
  • Perform RF device modeling for power amplifiers, SOI RF switches, and low noise amplifiers.
  • Design test fixtures and conduct DC/S-parameter/Load-pull measurement data analysis.
  • Execute electro-magnetic and electro-thermal simulations to improve model accuracy.
  • Define device characteristic requirements to drive RF circuit performance improvements.
  • Collaborate with process development teams to provide feedback on device physics.

Requirements

  • Bachelor’s degree in Electrical Engineering with 8+ years of related work or academic experience.
  • Solid understanding of BJT/HBT/MOSFET device physics across temperature, voltage, and current.
  • Proficiency in RF measurement fundamentals and de-embedding techniques.
  • Experience with Cadence layout tools, Keysight ADS, and TCAD simulators like Synopsys Sentaurus.
  • Strong communication, documentation, and teamwork skills.

Culture & Benefits

  • Opportunity to work with a global leader in semiconductor technology.
  • Collaborative environment focused on innovation in RF frontend modules.
  • Equal opportunity employer committed to diversity and inclusion.

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