Staff Device Engineer (NAND Memory)

Location: Milpitas, California, USA; onsite at the Milpitas office

Salary: $136,600–$232,200 per year

Company

hirify.global develops Flash memory and advanced memory technologies, combining semiconductor manufacturing capabilities with storage products for global customers.

What you will do

• Develop NAND memory trims and improve the performance and reliability of high-density flash memory.
• Partner with NAND design and system development teams on technology and product development.
• Define, develop, and execute NAND flash performance and reliability tests.
• Analyze and report test data to drive product and process improvements.
• Collaborate with process, design, reliability, and system groups on device support, memory qualification, and volume production ramp.
• Coordinate activities across storage business units, technology development, and manufacturing.

Requirements

• Master’s or Ph.D. degree in Electrical Engineering, Applied Physics, Materials Science, or a related field.
• 3+ years of relevant industry experience.
• In-depth knowledge of semiconductor device physics and familiarity with advanced semiconductor processes.
• Knowledge of design of experiments and data analysis.
• Strong analytical skills; experience with scripting languages or statistical analysis tools is preferred.
• Ability to work independently, achieve results in a dynamic environment, and collaborate across teams.

Culture & Benefits

• Paid vacation and sick leave.
• Medical, dental, and vision insurance, plus life, accident, and disability insurance.
• Flexible spending and health savings accounts, employee assistance, and additional voluntary benefits.
• Tuition reimbursement, transit benefits, employee stock purchase plan, and 401(k) savings plan.
• Eligibility for short-term incentives and, depending on role and performance, long-term incentives or restricted stock units.
• Inclusive workplace with equal opportunity and disability accommodation support.