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6 часов назад

TD Memory Quality and Reliability Engineer (SRAM)

155 520 - 219 550$
Формат работы
hybrid
Тип работы
fulltime
Грейд
senior
Английский
b2
Страна
US
Вакансия из списка Hirify.GlobalВакансия из Hirify Global, списка международных tech-компаний
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Описание вакансии

Текст:
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TL;DR
TD Memory Quality and Reliability Engineer (SRAM): Developing and certifying SRAM, Register File, and fuse arrays for advanced semiconductor technology nodes with an accent on post-silicon characterization, statistical data analysis, and predictive Vccmin/Vmax modeling. Focus on silicon-to-simulation correlation, memory variability and margin assessment, risk projections, and cross-functional technology readiness decisions.

Location: Hybrid work model with on-site attendance at an assigned hirify.global site in Folsom, Santa Clara, or Hillsboro, United States

Annual salary: $155,520–$219,550 USD

Company

hirify.global develops advanced semiconductor process technologies and supports their deployment through silicon-based quality, reliability, and technology readiness assessments.

What you will do

  • Plan and execute SRAM, Register File, and fuse technology certification activities for advanced technology nodes.
  • Define certification methodologies, test strategies, readiness requirements, and memory array characterization flows.
  • Analyze large-scale silicon data across operating conditions to assess Vmin, Vmax, aging, variability, failure signatures, and design margins.
  • Develop and validate silicon-based Vccmin and Vmax predictive models for certification, PDK releases, and product guidance.
  • Perform silicon-to-simulation correlation assessments and identify root causes of discrepancies between measured silicon behavior and design predictions.
  • Collaborate with Design, Device Engineering, Product Development Engineering, Yield, Process, Test, and reliability teams to deliver risk assessments and technology improvement recommendations.

Requirements

  • Ph.D. in Electrical Engineering, Computer Engineering, Physics, or a related discipline with 2+ years of semiconductor industry experience, or an M.S. in a related field with 6+ years of semiconductor industry experience.
  • At least 2 years of hands-on experience with memory testing.
  • At least 2 years of quantitative analysis experience with large-scale memory or semiconductor datasets using statistical methods such as DOE, SPC, regression analysis, hypothesis testing, or multivariate analysis.
  • At least 2 years of hands-on experience using JMP and Python for data analysis, statistical modeling, process optimization, automation, or visualization.
  • Strong analytical, problem-solving, communication, and cross-functional collaboration skills.

Nice to have

  • Experience in memory design, characterization, validation, modeling, product development, quality, reliability, or technology development.
  • Knowledge of SRAM or Register File design, Vmin/Vmax characterization, memory margin assessment, array screening, or design-technology co-optimization.
  • Experience with predictive models, statistical distributions, guardbands, product risk projections, Sil2Sim, SPICE modeling, or design validation.
  • Programming experience in JSL, SQL, or data analytics frameworks.

Culture & Benefits

  • Hybrid work model combining on-site work at an assigned hirify.global site with off-site work.
  • Competitive pay, stock bonuses, health benefits, retirement programs, and vacation.
  • Highly collaborative environment involving multiple engineering and program organizations.
  • Opportunities to provide technical mentorship and influence technology development decisions.

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